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The 1N5818RL is a 1A 30V Schottky rectifier. The 1N5818RL employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes, and polarity protection diodes.
Features:
Extremely Low VF
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Datasheet Available:On Semiconductor 1N5818RL
DO-41 package. Manufactured by On Semiconductor.
A20368
A20368 - 1N5818RL 1A 30V Schottky Rectifier (On Semi)
Detailed Description
The 1N5818RL is a 1A 30V Schottky rectifier. The 1N5818RL employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes, and polarity protection diodes.
Features:
Extremely Low VF
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Datasheet Available:On Semiconductor 1N5818RL
DO-41 package. Manufactured by On Semiconductor.
A20368
WARNING: This product can expose you to chemicals including lead, which is known to the State of California to cause cancer. For more information, go to www.P65Warnings.ca.gov - Why is this here?
